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Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.02 W
Maximum Collector-Base Voltage |Vcb|: 10 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.002 A
Max. Operating Junction Temperature (Tj): 85 °C
Transition Frequency (ft): 0.4 MHz
Collector Capacitance (Cc): 36 pF
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
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