Genuine RCA TO-3 2N5039 Power Amp NPN Transistors For Sale

Genuine RCA TO-3 2N5039 Power Amp NPN Transistors


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Genuine RCA TO-3 2N5039 Power Amp NPN Transistors:
$79

Removed from sockets of new surplus equipment.2N5039Silicon NPN TransistorsPower Amp, SwitchTO−3 Type PackageDescription:The 2N5038 and 2N5039 are silicon NPN transistors in a TO−3 type package that have fast switchingspeeds and high current capacity that ideally suit these devices for use in switching regulators, inverters,wide−band amplifiers and power oscillators in industrial and commercial applications.Features:High Speed: tf = 0.5s Max.High Current: IC(max) = 30ALow Collector−Emitter Saturation Voltage: VCE(sat) = 2.5V max @ IC = 20AAbsolute Maximum Ratings:Collector−Base Voltage, VCBO2N5039 120VCollector−Emitter Voltage, VCEV2N5038 150V2N5039 120VEmitter−Base Voltage, VEBO 7VCollector Current, ICContinuous 20APeak (Note 1) 30AContinuous Base Current, IB 5ATotal Device Dissipation (TC = +25C), PD 140WDerate Above 25C 0.8W/ COperating Junction Temperature Range, TJ .................................. −65 to +200CStorage Temperature Range, Tstg −65 to +200CMaximum Thermal Resistance, Junction−to−Case, RthJC ........................... 1.25C/WNote 1. Pulse Test: Pulse Width  10ms, Duty Cycle  50%.Electrical Characteristics: (TC = +25C unless otherwise specified)Parameter Symbol Test Conditions Min Typ Max UnitOFF CharacteristicsCollector−Emitter Sustaining Voltage2N5038 VCEO(sus) IC = 200mA, IB = 0, Note 2 90 − − V2N5039 75 − − VCollector Cutoff Current2N5038 ICEX VCE = 140V VEB(off) = 1.5V − − 50 mA2N5039 VCE = 110V − − 50 mA2N5038 VCE = 100V VEB(off) = 1.5V,TC = +150C− − 10 mA2N5039 VCE = 85V − − 10 mANote 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)Parameter Symbol Test Conditions Min Typ Max UnitEmitter Cutoff Current2N5038 IEBO VBE = 5V, IC = 0 − − 5 mA2N5039 − − 15 mABoth VBE = 7V, IC = 0 − − 50 mAON Characteristics (Note 2)DC Current Gain2N5038 hFE VCE = 5V IC = 12A 20 − 1002N5039 IC = 10A 20 − 100Collector−Emitter Saturation Voltage VCE(sat) IC = 20A, IB = 5A − − 2.5 VBase−Emitter Saturation Voltage VBE(sat) IC = 20A, IB = 5A − − 3.3 VDynamic CharacteristicsMagnitude of Common−EmitterSmall−Signal Short−CircuitForward Current Transfer Ratio|hfe| VCE = 10V, IC = 2A, f = 5MHz 12 − −Switching Characteristics (Resistive Load)2N5038Rise Time tr VCC = 30V, IC = 12A, IB1 = IB2 = 1.2A − − 0.5 sStorage Time ts − − 1.5 sFall Time tf − − 0.5 s2N5039Rise Time tr VCC = 30V, IC = 10A, IB1 = IB2 = 1A − − 0.5 sStorage Time ts − − 1.5 sFall Time tf − − 0.5 sNote 2. Pulse Test: Pulse Width  300s, Duty Cycle  2%.1.187 (30.16).875 (22.2)Dia (7.93) Min .040 (1.02).135 (3.45) Max.350 (8.89)EmitterBase Collector/Case.215 (5.45).525 (13.35) R Max


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Motorola Bc212b Pnp Silicon Gen Purpose Transistor 50v 300ma To92 Mbd020g picture
Motorola Bc212b Pnp Silicon Gen Purpose Transistor 50v 300ma To92 Mbd020g


Motorola Bc212b Pnp Silicon Gen Purpose Transistor 50v 300ma To92 Mbd020g picture
Motorola Bc212b Pnp Silicon Gen Purpose Transistor 50v 300ma To92 Mbd020g


Motorola Bc212b Pnp Silicon Gen Purpose Transistor 50v 300ma To92 Mbd020g picture
Motorola Bc212b Pnp Silicon Gen Purpose Transistor 50v 300ma To92 Mbd020g


Motorola Bc212b Pnp Silicon Gen Purpose Transistor 50v 300ma To92 Mbd020g picture
Motorola Bc212b Pnp Silicon Gen Purpose Transistor 50v 300ma To92 Mbd020g


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