6-PCS GT30F124 30F124 IGBT Transistor TO-220
-Applications: Plasma display panels
-IGBTscombine the MOSFET advantage of high input impedance with the bipolartransistor advantage of high-voltage drive.
-The conductivity modulation characteristics of a bipolar transistor make itideal for load control applications that require high breakdown voltage andhigh current.-Toshiba offers a family of fast switching IGBTs, which are low in carrierinjection and recombination in carrier.
-TheToshiba discrete IGBTs are available in high-voltage and high-current ratings.They are used in inverter and power conversion circuits for such diverseapplications as motor drivers, uninterruptible power supply (UPS) systems, IHcookers, plasma display panels (PDPs), strobe flashes and so on.
(1)IGBTs also featuring fast switching
(2)Low collector-emitter saturation voltage even in the large current area
(3)IGBTs featuring a built-in diode with optimal characteristics tailored tospecific applications
(4)High input impedance allows voltage drives
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