1 pcs RF VHF Transistor 20 - 200 MHz up to 85 Watt 12.5 - 14.8 V For Sale

1 pcs RF VHF Transistor 20 - 200 MHz up to 85 Watt 12.5 - 14.8 V
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1 pcs RF VHF Transistor 20 - 200 MHz up to 85 Watt 12.5 - 14.8 V:
$39.00

KT958ATransistors KT958A silicon epitaxial-planar structures n-p-n generator.Designed for use in broadband power amplifiers, frequency multipliers and oscillators at frequencies of 50 ... 200 MHz at a supply voltage of 12.6 V.They are produced in a sintered body with strip leads.There is an LC matching link inside the housing.Used for general purpose electronic equipment.
Main technical characteristics of the KT958A transistor:• Transistor structure: n-p-n;• Рк and max - The maximum allowable impulse dissipated power of the collector: 85 W;• fgr - Cutoff frequency of the current transfer coefficient of the transistor for the circuit with a common emitter: not less than 300 MHz;• Uker max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 36 V (0.01 kOhm);• Uebo max - Maximum emitter-base voltage at a given reverse current of the emitter and open collector circuit: 4 V;• Ik max - Maximum permissible direct current of the collector: 10 A;• Iker - Reverse collector-emitter current at a given collector-emitter reverse voltage and base-emitter resistance: no more than 25 mA (36V);• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 10;• CK - Collector junction capacity: no more than 180 pF;• Cu.r.r. - Power amplification factor: not less than 4 dB;• Рout - Output power of the transistor: at least 40 W at a frequency of 175 MHz;• tc - Time constant of the response loop at high frequency: no more than 12 ps


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