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Lot of 1 pcs
New, never used /NOS / New Old Stock/
KT8110A
Transistors silicon planar structures n-p-n switching.
The structure of n-p-n
The maximum allowable (impulse) voltage of the collector-base is 500 V
The maximum allowable (impulse) voltage of the collector-emitter is 450 V
Maximum allowable permanent (pulse) collector current 7000 (14000) mA
Maximum permissible continuous dissipated collector power without heat sink (with heat sink) (60) W
Static current transfer ratio of a bipolar transistor in a common-emitter circuit 15....30
Reverse collector current <= 2000 μA
Boundary frequency of the current transfer coefficient in a circuit with a common emitter of 20 MHz
Noise factor of bipolar transistor <0.8 dB
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