This item has been shown 66 times.
Lot of 4 pcs
New, never used /NOS / New Old Stock/
Structure of the transistor: MOSFET
Type of control channel: N
Limit constant dissipation power drain (Pd) of the transistor: 36 W
Drain-Source Breakdown Voltage (Uds): 350 V
Limit gate-source voltage (Ugs): 20 V
Limit gate current of the transistor (Id): 2 A
Limiting temperature (Tj): 125 С
Resistance of drain-source in the on state (Rds): 3.6 Ohm
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