This item has been shown 55 times.
Lot of 4 pcs
New, never used /NOS / New Old Stock
Structure of the transistor: MOSFET
Type of control channel: N
Limit constant dissipated drain power (Pd) of the transistor: 150 W
Drain-Source Breakdown Voltage (Uds): 60 B
Limit gate-source voltage (Ugs): 20 V
Limit gate current of the transistor (Id): 50 A
Limiting temperature (Tj): 150 С
Resistance of drain-source on (Rds): 0.035 Ohm
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